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This document offers a concise yet informative overview of two crucial methods in materials science: chemical vapor deposition (cvd) and the sol-gel method. it details the principles, processes, and applications of each technique, highlighting their significance in creating thin films and nanostructures. Suitable for undergraduate students in materials science, chemistry, and related fields, providing a foundational understanding of these widely used methods. it also touches upon the advantages and limitations of each method, making it a valuable resource for students seeking to understand the synthesis and fabrication of advanced materials.
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Chemical vapour deposition (CVD) is a well-known technology in the field of nonmanufacturing. It is often used in large-scale integrated circuits, insulating materials, magnetic materials, and optoelectronic materials. Chemical vapour deposition (CVD) and Physical vapour deposition (PVD) are two different processes used to deposit thin films of material onto a substrate. Both CVD and PVD are widely used in the semiconductor industry and other fields to produce thin films for a variety of applications. Chemical vapour deposition (CVD) can deposit evaporated reactants on the surface to form thin films. For example, graphene is the most widely recognized product of CVD. So, what is the principle of CVD? Principle of Chemical Vapour Deposition (CVD) CVD has been studied since the end of the 19th century. It is mainly used in the synthesis and preparation of important materials. If we want to know how CVD makes a specific film, we must first understand its principle. CVD belongs to the "bottom-up" technology. Its principle is to introduce the vapour of gaseous or liquid reactants containing film elements and other gases needed to react into the reaction chamber. By increasing the temperature, plasma action, light radiation, or other forms of energy, CVD can produce chemical reactions on the substrate surface and generate new solid substances to be deposited on the surface. Dr. P. Venkata Ramana, AUCE(A)
CVD consists of four main stages: ① The reaction gas diffuses to the surface of the material. ② The reaction gas is adsorbed on the surface of the material. ③ Chemical reaction occurs on the surface of the material. ④ The gaseous by-products are separated from the material surface. Because of the molecular level nucleation or growth, CVD is more suitable for forming dense and uniform films on the irregular substrate surface. CVD deposition speed is fast, and film quality is stable. Some notable films also have excellent optical, thermal, and electrical properties, making it easy to achieve mass production. The deposition temperature of CVD is usually very high, between 900 ℃ ~ 2000 ℃, it is easy to cause the deformation of parts and the change of structure so as to reduce the mechanical properties of the body material and weaken the binding force between the body material and the coating, which limits the selection of substrate, the deposition layer or the quality of the workpiece. Therefore, low temperature and high vacuum are the main development directions of CVD.
The sol-gel process is a more chemical method (wet chemical method) for the synthesis of various nanostructures, especially metal oxide nanoparticles. In this method, the molecular precursor (usually metal alkoxide) is dissolved in water or alcohol and converted to gel by heating and stirring by hydrolysis/alcoholysis. Since the gel obtained from the hydrolysis/alcoholysis process is wet or damp, it should be dried using appropriate methods depending on the desired properties and application of the gel. For example, if it is an alcoholic