Baixe Sensitive Gate Triacs e outras Notas de estudo em PDF para Automação, somente na Docsity!
BTA04 T/D/S/A
BTB04 T/D/S/A
March 1995
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (360° conduction angle)
BTA Tc = 90°C 4 A
BTB Tc = 95°C
ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C )
tp = 8.3 ms 42 A
tp = 10 ms 40
I2t I2t value tp = 10 ms 8 A2s
dI/dt Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/μs
Repetitive F = 50 Hz
10 A/μs
Non Repetitive
Tstg Tj
Storage and operating junction temperature range - 40 to + 150
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case
260 °C
TO220AB
(Plastic)
A A2 G
. VERY LOW IGT = 10mA max
. LOW IH = 15mA max
. BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter BTA / BTB04- Unit
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
VDRM VRRM
Repetitive peak off-state voltage Tj = 110°C
400 600 700 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA/BTB04 T/D/S/A triac family are high per-
formance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
BTA 3.3 °C/W
BTB 2.
Symbol Test Conditions Quadrant Suffix Unit
T D S A
IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-II I MAX 5 5 10 10 mA
IV MAX 5 10 10 25
VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=VDRM IG = 40mA dIG/dt = 0.5A/μs
Tj=25°C I-II-III-IV TYP 2 μs
IL IG= 1.2 IGT Tj=25°C I-III-IV TYP 10 10 20 20 mA
II 20 20 40 40
IH * IT= 100mA gate open Tj=25°C MAX 15 15 25 25 mA
VTM * ITM= 5.5A tp= 380μs Tj=25°C MAX 1.65 V
IDRM IRRM
VDRM Rated VRRM Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.
dV/dt * Linear slope up to VD=67%VDRM gate open
Tj=110°C TYP 10 10 - - V/μs
MIN - - 10 10
(dV/dt)c * (dI/dt)c = 1.8A/ms Tj=110°C TYP 1 1 5 5 V/μs
- For either polarity of electrode A 2 voltage with reference to electrode A 1.
PG (AV) = 1W PGM = 40W (tp = 20 μs) IGM = 4A (tp = 20 μs) VGM = 16V (tp = 20 μs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature.
Fig.7 : Non Repetitive surge peak on-state current versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I^2 t.
Fig.9 : On-state characteristics (maximum values).
1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +
0.
0.
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.5 : Relative variation of thermal impedance versus pulse duration.
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N.
REF. DIMENSIONS
Millimeters Inches Min. Max. Min. Max. A 10.20 10.50 0.401 0. B 14.23 15.87 0.560 0. C 12.70 14.70 0.500 0. D 5.85 6.85 0.230 0. F 4.50 0. G 2.54 3.00 0.100 0. H 4.48 4.82 0.176 0. I 3.55 4.00 0.140 0. J 1.15 1.39 0.045 0. L 0.35 0.65 0.013 0. M 2.10 2.70 0.082 0. N 4.58 5.58 0.18 0. O 0.80 1.20 0.031 0. P 0.64 0.96 0.025 0.
I
= =
A G
D
B
C
F
P
N
O
M
L
J
H
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
